R&D UNIT

National Chiao Tung University / Professor Bing-Yue Tsui

National Tsing Hua University / Professor Chih-Fang Huang

National Taiwan University / Professor Kung-Yen Lee

Technical Introduction

Develop a SiC single-chip power system platform across processes, devices, and circuits to breakthrough the temperature and power constraints of Si applications. The research includes low-voltage CMOS logic circuits, high- voltage driver circuits, and vertical super-junction MOSFETs. All specifications exceed existing technology. The results can be applied to energy networks, rail transit, electric vehicles, data center, aerospace, defense and other fields.

Scientific Breakthrough

The single-chip power system platform will provide SiC low-voltage logic IC technology which is superior to existing international technology; provide various lateral high-voltage devices to implement SiC driving circuit which has not been realized; and demonstrate 600 V ~3.3 kV super junction SiC MOSFET which has not been commercialized. All of these are leading technology in the world.

Industrial Application

The project develops 600 V to 3.3 kV super junction (SJ) MOSFETs, which are widely used in electric vehicles, smart grids, rail transportation and other fields. The SJ structure can greatly reduce the on-resistance and thus power loss. The SJ MOSFETs will be integrated with the full-SiC driving circuits and logic circuits to maximize the material advantages of SiC. These technologies would trigger a new economic industry.