Research project principal investigator:  Professor Hsiao-Wen Zan

 

1 - We used near-infrared (NIR) laser to realize low temperature annealing of metal oxide semiconductor on flexible plastic substrate. Using IZO metal oxide with the NIR absorbing molecules as photo initiator, the NIR-annealed IZO device can detect H2S gas in part-per-billion concentration within a few tens of seconds. The sensor can be potentially applied in environmental H2S safety detection. The work was published in ACS AMI 2020.


2 - We also co-supervised PhD student to successfully obtain the Taiwan-France double PhD degree. The student’s dissertation also was recognized by “Lam Research Award” in Taiwan as well as the “Dissertation Award” from the UHA in France. Part of the work was published in Adv. Mater. 2018 and ACS Sensors. 2019. One unique technique was introducing NIR laser two photon polymerization to realize the 3-dimensional patterning of metal oxide material. In TiO2 material, the formation of graphene-like carbon nanoparticles also facilitates the conductivity of TiO2. As a result, the structure formed by NIR laser two photon polymerization can be used as a miniaturized pressure sensor.