National Yang Ming Chiao Tung University held a book launch of the fourth edition of "Physics of Semiconductor Devices" by Academician Simon Sze, a tenured chair professor. At the same time, Academician Simon Sze also donated the trophy of "Future Science Prize" awarded in 2021 to the University as a commemorative collection.

National Yang Ming Chiao Tung University said that Dr. Simon Sze''''s "Physics of Semiconductor Devices" written in 1967-1969 was originally used for lectures in the Institute of Electronics, National Chiao Tung University, and quickly attracted worldwide attention. It was translated into 6 languages and published more than 3 million copies. It has been continuously cited by teachers, students, researchers and related industries in the field of semiconductor and integrated circuits around the world, and has become the world''''s best-selling "Semiconductor Bible". In response to the ever-changing new technologies and techniques, Volumes 1 and 2 of the fourth edition released today, which differs from the third edition published fifteen years ago is in response to the concept of devices and breakthrough in performance, not only 50% of the contents has been corrected or updated, more on many contemporary interesting devices, such as negative capacitors, tunneling field effect transistors, multi-layer cells and three-dimensional flash memory, GaN modulation doped field effect transistors, intermediate band solar cells, Emitter-Off Thyristors, Lattice-Temperature Equations, etc., fully present and revise the concept, performance and application of the latest developing devices.

Academician Simon Sze, who leads the development of global semiconductor devices, won the "Mathematics and Computer Science Prize" of the "Future Science Prize " in 2021. Today, under the witness of many distinguished guests, the trophy of the important Prize is donated to the collection of National Yang Ming Chiao Tung University. In addition, the exhibition also displayed some trophies such as the Lifetime Achievement Award (2014) in the Flash Memory Summit, and the highest honor "Celebrated Member" award (2017)" by the Institute of Electrical and Electronics Engineers (IEEE).; and the precious historical materials such as the earliest paper on floating gate memory published by Academician Simon Sze in 1964, and the English manuscript of "Physics of Semiconductor Devices".

Academician Simon Sze received his Ph.D. in electrical engineering from Stanford University in 1963 and entered Bell Labs, a well-known R&D center. He discovered the "Floating-gate memory effect" with his colleague Dr. Dawon Kahng. A variety of memories are derived from the basic concept of this theory, among which "flash memory" is the core device of all current mobile electronic products.

In 1968-1969, Academician Simon Sze took a long leave to return to National Chiao Tung University to supervise the first doctoral student Chun-Yen Chang (the first PhD of engineering in Taiwan) to propose the theory of electron flow and transmission mode between metals and semiconductors, laying the foundation for the past 50 years of the most crucial contact between Ohm and Schottky in integrated circuit devices, enables the chip industry to continue to expand in accordance with "Moore''''s Law", becoming an indispensable element of various electronic systems, and greatly improving human life and civilization. In 1990, Academician Simon Sze officially came to National Chiao Tung University to be a Chair Professor. In 2010, National Chiao Tung University awarded a tenured chair professor to Academician Simon Sze. He has taught at National Yang Ming Chiao Tung University for more than 30 years, bringing students a world-class vision and educating countless talents.

Academician Simon Sze’s achievements and contributions are highly respected internationally. He was awarded the IEEE J.J. Ebers Award in 1991 and the most prestigious Celebrated Member Award of IEEE in 2017; he is one of the few academicians elected as academicians of the Academia Sinica, the National Academy of Engineering, and the foreign academicians of the Chinese Academy of Engineering; Academician of ITRI, Global "Flash Memory Summit" (Flash Memory Summit) "Lifetime Achievement Award", "Future Science Prize".